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A CHT simulation of a generic PLUSPak247-cased linear Power MOSFET on a near 'infinite' heatsink (1m x1m x 0.1m, high thermal conductivity of 1e+6W/m.K). 

The  10mm x 10mm x 0.2mm silicon die (chip) is bonded to the copper tab with a bonding material of similar dimensions whose thermal conductivity is then empirically adjusted  to make the overall Tjc equal to 0.12W/m.K.

The model MOSFET 2can then be used in a subsequent simulation of 6 or 8 devices on a forced-air cooled finned and enclosed heatsink.

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